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KO50001004-00190075-0043.pdf
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| Title |
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Transient temperature behavior of transistor junctions under pulse operation
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| Creator |
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鈴木, 登紀男
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| Kana |
スズキ, トキオ
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Suzuki, Tokio
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Associate Professor, Faculty of Engineering, Keio University
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広瀬, 治男
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ヒロセ, ハルオ
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Hirose, Haruo
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Instructor, Faculty of Engineering, Keio University
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慶応義塾大学藤原記念工学部
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| Kana |
ケイオウ ギジュク ダイガク フジワラ キネン コウガクブ
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| Romanization |
Keio gijuku daigaku Fujiwara kinen kogakubu
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| Date |
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1966
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Proceedings of the Fujihara Memorial Faculty of Engineering Keio University
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慶応義塾大学藤原記念工学部研究報告
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| Volume |
19
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| Issue |
75
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| Year |
1966
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| Start page |
199(43)
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209(53)
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| Abstract |
Based on the equivalent circuit approach, the temperature behavior of the transistor junction is investigated through the experiments. It is clarified for pulse operation that a few RC pairs present sufficiently good approximation to the junction temperature variation at a dynamic quasi-steady state.
When mean power performance is considered, a low frequency pulse operation should require a transistor with negligibly small thermal resistances accompanied with small thermal time constants and with relatively high thermal resistances of large time constants.
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| Departmental Bulletin Paper
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