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KAKEN_23360161seika.pdf
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:Dec 11, 2014 |
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| Title |
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ナノ高強度散乱近接場光プロセスによる表面機能光学素子の開発
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ナノ コウキョウド サンラン キンセツジョウ ヒカリ プロセス ニ ヨル ヒョウメン キノウ コウガク ソシ ノ カイハツ
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Nano kokyodo sanran kinsetsujo hikari purosesu ni yoru hyomen kino kogaku soshi no kaihatsu
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Nanoprocessing of surface photonic elements with high intensity scattered near-field excited by femtosecond laser
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小原, 實
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オバラ, ミノル
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Obara, Minoru
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慶應義塾大学・理工学部・名誉教授
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Research team head
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科研費研究者番号 : 90101998
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斎木, 敏治
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サイキ, トシハル
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Saiki, Toshiharu
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慶應義塾大学・理工学部・教授
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Research team member
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科研費研究者番号 : 70261196
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津田, 裕之
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ツダ, ヒロユキ
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Tsuda, Hiroyuki
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慶應義塾大学・理工学部・教授
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Research team member
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科研費研究者番号 : 90327677
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寺川, 光洋
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テラカワ, ミツヒロ
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Terakawa, Mitsuhiro
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慶應義塾大学・理工学部・専任講師
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Research team member
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科研費研究者番号 : 60580090
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2014
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科学研究費補助金研究成果報告書
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2013
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微小構造からの散乱近接場光は局在し、フェムト秒レーザー励起光強度より増強近接場強度となり、ナノプロセシングが可能となる。本研究は、照射方式、散乱体構造・サイズ、プロセス基板の種類から、近接場特性とアブレーション特性を明らかにした。プラズモニック散乱とMie散乱近接場の特徴を明確にした。散乱増強近接場光とともに、散乱遠方場光を使った表面微細周期構造の作製とその作製メカニズムを解明した。
An enhanced near-field scattered from nanostructures is localized to the nano-scale zone, and is then used for nano-ablation processing of a variety of advanced functional materials. This report presents theoretically and experimentally the characteristics of near-field and nano-ablation in terms of femtosecond laser polarization, irradiation angles, scattering structures, scattering materials, work materials. Near-fields from plasmonic scattering and Mie scattering are clearly explained. In addition to the enhanced near-field processing, the mechanism of surface ripples formed by the interference of the incident femtosecond laser and the scattered far-field light is well explained by using the 3D FDTD method. The nano-patterned surfaces fabricated these methods can potentially be used for surface photonic devices.
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研究種目 : 基盤研究(B)
研究期間 : 2011～2013
課題番号 : 23360161
研究分野 : 工学
科研費の分科・細目 : 電気電子工学・電子デバイス・電子機器
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