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KO50001004-00150057-0021.pdf
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Title |
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Semiconductor radiation detector (II)
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Creator |
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宮尾, 亘
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Kana |
ミヤオ, ワタル
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Romanization |
Miyao, Wataru T.
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Lecturer at Faculty of Engineering, Keio University
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慶応義塾大学藤原記念工学部
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Kana |
ケイオウ ギジュク ダイガク フジワラ キネン コウガクブ
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Romanization |
Keio gijuku daigaku Fujiwara kinen kogakubu
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1962
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Proceedings of the Fujihara Memorial Faculty of Engineering Keio University
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Name (Translated) |
慶應義塾大学藤原記念工学部研究報告
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Volume |
15
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Issue |
57
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1962
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57(21)
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65(29)
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Description is given of a p-n junction type semiconductor detector. By a shallow diffusion of phosphorous into p-type silicon wafer, a p-n junction detector was manufactured. The characteristics of the detector as an alpha particles spectrometer was measured. Since the characteristics of the detector depends on surrounding conditions; i. e., the temperature, the humidity, etc., the effects of these factors were investigated. The p-n junction detector must be operated under dark and dry surroundings and below room tenperature.
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Departmental Bulletin Paper
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