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KAKEN_16H04355seika.pdf
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チップ上・高速・高集積ナノカーボン光電子素子開発と光インターコネクト応用
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チップジョウ・コウソク・コウシュウセキ ナノカーボン コウデンシ ソシ カイハツ ト ヒカリ インターコネクト オウヨウ
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Chippujō kōsoku kōshūseki nanokābon kōdenshi soshi kaihatsu to hikari intākonekuto ōyō
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On-chip, high-speed, integrated optoelectronic nanocarbon devices for optical interconnects
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牧, 英之
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マキ, ヒデユキ
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Maki, Hideyuki
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慶應義塾大学・理工学部 (矢上) ・准教授
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Research team head
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科研費研究者番号 : 10339715
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森山, 悟士
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モリヤマ, サトシ
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Moriyama, Satoshi
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国立研究開発法人物質・材料研究機構・国際ナノアーキテクトニクス研究拠点・主任研究員
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Research team member
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科研費研究者番号 : 00415324
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2020
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科学研究費補助金研究成果報告書
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2019
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本研究では、黒体放射光源およびEL発光素子開発と発光メカニズムやデバイス構造探索、シリコン上での高集積光技術との融合技術の構築に関して研究を進めた。黒体放射光源開発では、材料・デバイス構造の最適化、発光メカニズム解明のための理論構築やシミュレーションなどを進めた。また、シリコン上で大面積に作製可能な新たなグラフェン成長方法の構築を進めた。EL発光素子では、発光メカニズム解明や発光素子の性能評価とその向上方法を検討した。また、高集積光技術では、シリコンフォトニクスとの融合手法の構築を進めた。
In this research, we proceeded with research on the development of a blackbody emitters and EL emitters, investigation of emission mechanisms and the optimization of the device structure, highly integrated optoelectronic devices on silicon chips. In the development of the blackbody emitters, we proceeded with optimization of materials and device structure, construction of theory and simulation for the elucidation of emission mechanisms. We also studied the new graphene growth method that can be directly formed on silicon substrate. For the EL emitter, we investigated the EL emitting mechanisms and its improvement method. In addition, for the highly integrated optoelectronic devices, we studied the coupling of nanocarbon device to silicon photonics, and we demostrated the optical coupling between carbon nanotube and optical waveguides and the control of emission properties.
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研究種目 : 基盤研究 (B) (一般)
研究期間 : 2016～2019
課題番号 : 16H04355
研究分野 : ナノデバイス
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