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/ Public / Faculty of Science and Technology / Keio Science and Technology Reports / 35(1982) / 35(7) 198208   
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Keio Science and Technology Reports. 35, 7 ( 1982 . 8 )
icon_article Effect of subband-interaction on relaxation time of hole in p-type silicon and germanium

武田, 京三郎 , 作井, 康司 , 田口, 明仁 , 坂田, 亮
Keio Science and Technology Reports. 35, 7 ( 1982 . 8 ) ,p. 123 - 138
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Keio Science and Technology Reports. 35, 7 ( 1982 . 8 )