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KO50001004-00350007-0123.pdf
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| Title |
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Effect of subband-interaction on relaxation time of hole in p-type silicon and germanium
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| Creator |
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武田, 京三郎
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| Kana |
タケダ, キョウザブロウ
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| Romanization |
Takeda, Kyozaburo
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| Affiliation |
Department of Instrumentation Eng., Faculty of Science and Technology, Keio University
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| Name |
作井, 康司
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| Kana |
サクイ, コウジ
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| Romanization |
Sakui, Koji
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| Affiliation |
Department of Instrumentation Eng., Faculty of Science and Technology, Keio University
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田口, 明仁
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タグチ, アキヒト
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| Romanization |
Taguchi, Akihito
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| Affiliation |
Department of Instrumentation Eng., Faculty of Science and Technology, Keio University
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| Name |
坂田, 亮
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| Kana |
サカタ, マコト
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Sakata, Makoto
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| Affiliation |
Department of Instrumentation Eng., Faculty of Science and Technology, Keio University
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慶應義塾大学理工学部
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| Kana |
ケイオウ ギジュク ダイガク リコウガクブ
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| Romanization |
Keio gijuku daigaku rikogakubu
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1982
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Keio Science and Technology Reports
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35
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| Issue |
7
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| Year |
1982
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8
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| Start page |
123
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138
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| Abstract |
Considering the warping and the non-parabolicity of equi-energy surfaces and also the existence of three types of holes, we calculated the relaxation times of holes due to lattice scattering including the non-polar optical phonon scattering, the impurity scattering with neutral center as well as with ionized center scattering.
The effect of interaction between three subbands in the valence band is recognized most significantly in the non-polar optical phonon scattering of silicon. For silicon whose split-off energy is considerably small, it is very important to consider the effect of the subband-interaction if we want to estimate accurate values of relaxation times due to lattice scattering and also ionized impurity center scattering.
In highly doped samples (over 10¹⁷ cm⁻³), one should consider the effect of neutral center scattering with accurate screening distance.
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