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KO50001004-00190074-0039.pdf
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:application/pdf |
Download
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:303.2 KB
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| Last updated |
:Aug 27, 2019 |
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: 350 |
Total downloads since Aug 27, 2019 : 350
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| Title |
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Diffusion of phosphorus in silicon
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| Creator |
| Name |
安西, 修一郎
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| Kana |
アンザイ, シュウイチロウ
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| Romanization |
Anzai, Shūichirō
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| Affiliation |
lnstructor, Faculty of Engineering, Keio University
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| Link |
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松本, 三郎
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| Kana |
マツモト, サブロウ
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| Romanization |
Matsumoto, Saburō
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| Affiliation |
Late Student, Present address Showa Electrochemical lndustry Ltd.
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下重, 長正
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| Kana |
シモシゲ, チョウセイ
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| Romanization |
Shimoshige, Chōsei
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| Affiliation |
Late Student, Present address Sumitomo Metal lndustries Ltd.
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柳沢, 三郎
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| Kana |
ヤナギサワ, サブロウ
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| Romanization |
Yanagisawa, Saburō
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| Affiliation |
Professor, Faculty of Engineering, Keio University
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慶応義塾大学藤原記念工学部
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| Kana |
ケイオウ ギジュク ダイガク フジワラ キネン コウガクブ
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| Romanization |
Keio gijuku daigaku Fujiwara kinen kogakubu
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| Date |
| Issued (from:yyyy) |
1966
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| Source Title |
| Name |
Proceedings of the Fujihara Memorial Faculty of Engineering Keio University
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| Name (Translated) |
慶応義塾大学藤原記念工学部研究報告
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| Volume |
19
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| Issue |
74
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| Year |
1966
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| Start page |
149(39)
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155(45)
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| Abstract |
The diffusivity of phosphorus into (111) plane of silicon has been measured by means of radioactivated elemental phosphorus and electro-polishing method. The diffusion coefficient has been determined as D=0.12×exp (-2.9eV/kT)cm²/sec. By comparing the activation energy values for diffusion of various atomic species in silicon, it has been found empirically that enthalpy of migration is proportional to square of radius of solute atom.
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| Departmental Bulletin Paper
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| History |
| May 17, 2016 | | |
| May 18, 2016 | | インデックス, 著者 を変更 |
| May 18, 2016 | | インデックス を変更 |
| Aug 27, 2019 | | 著者,著者 ローマ字,出版者 カナ,上位タイトル 名前,ISSN を変更 |
| Aug 27, 2019 | | 著者 ローマ字 を変更 |
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