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KAKEN_18H01485seika.pdf
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:May 17, 2022 |
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磁気トンネル接合における電圧誘起型巨大磁気キャパシタンス効果の発現
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ジキ トンネル セツゴウ ニ オケル デンアツ ユウキガタ キョダイ ジキ キャパシタンス コウカ ノ ハツゲン
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Jiki tonneru setsugō ni okeru den'atsu yūkigata kyodai jiki kyapashitansu kōka no hatsugen
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Observation of voltage-induced large magnetocapacitance effect in magnetic tunnel junctions
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海住, 英生
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カイジュウ, ヒデオ
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Kaijū, Hideo
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慶應義塾大学・理工学部 (矢上) ・准教授
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Research team head
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科研費研究者番号 : 70396323
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西井, 準治
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ニシイ, ジュンジ
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Nishii, Junji
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北海道大学・電子科学研究所・教授
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Research team member
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科研費研究者番号 : 60357697
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長浜, 太郎
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ナガハマ, タロウ
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Nagahama, Tarō
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北海道大学・工学研究院・准教授
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Research team member
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科研費研究者番号 : 20357651
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2021
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科学研究費補助金研究成果報告書
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2020
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| Abstract |
近年、磁場によりキャパシタンス(＝電気容量)が変化する磁気キャパシタンス効果は、高感度磁気センサ、省エネメモリ、大容量蓄電材料への応用が期待されていることから、国内外で大きな注目を集めている。中でも、2層の磁性体の間に絶縁体が挟まれた磁気トンネル接合(MTJ)は、室温にて巨大なトンネル磁気キャパシタンス(TMC)効果を示すことから盛んに研究が進められている。本研究課題では、絶縁層としてMgOを用いたMTJを作製し、TMC効果の電圧依存性を調べた。その結果、室温にて300%を超えるTMC効果の観測に初めて成功し、そのメカニズムが拡張デバイ・フレーリッヒモデルで説明できることがわかった。
Magnetocapacitance (MC) effect has attracted much attention due to their potential applications as highly-sensitive magnetic sensors, high-frequency devices and energy storage materials. The MC effect has been observed in multiferroic materials, spintronic devices and magnetic supercapacitors. Here we focus on magnetic tunnel junctions (MTJs) in spintronic devices, and we report a new phenomenon, in which the tunneling magnetocapacitance (TMC) increases with biasing voltage in MgO-based MTJs. We have observed a maximum TMC value of beyond 300%, which is the largest voltage-induced TMC effect ever reported for MTJs. We have found excellent agreement between theory and experiment using extended Debye-Frohlich model. Based on our calculation, we predict that the TMC ratio could reach 1000% in MTJs. Our work has provided a new understanding on AC spin-dependent transports in spintronic devices, and the results reported here may open a novel pathway for spintronics applications.
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研究種目 : 基盤研究 (B) (一般)
研究期間 : 2018～2020
課題番号 : 18H01485
研究分野 : 応用物理
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